Improved Performance of InGaN-GaN Light-Emitting Diode by a Periodic n-Bowl Mirror Array

doi:10.1149/1.3156834

Title:	Improved Performance of InGaN-GaN Light-Emitting Diode by a Periodic n-Bowl Mirror Array
Authors:	Liao, Cheng Wu, YewChung Sermon 材料科學與工程學系 Department of Materials Science and Engineering
Keywords:	gallium compounds;III-V semiconductors;indium compounds;light emitting diodes
Issue Date:	2009
Abstract:	A periodic n-bowl mirror structure was introduced into light-emitting diodes with roughened p-GaN surface (RP-LED) by wafer bonding and laser lift-off technology. The performance of these n-bowl mirror light-emitting diodes (NBM-LEDs) was better than that of RP-LED. Besides, the light intensity and the output power of NBM-LEDs were increased with the decrease in n-bowl dimension. The view angle was decreased with the diameter of the n-bowl.
URI:	http://hdl.handle.net/11536/8006 http://dx.doi.org/10.1149/1.3156834
ISSN:	1099-0062
DOI:	10.1149/1.3156834
Journal:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume:	12
Issue:	9
Begin Page:	J77
End Page:	J79
Appears in Collections:	Articles