磷化銦晶圓後段製程之孔洞蝕刻製程研究

Abstract

本論文的研究實驗目的是在研究出適當的4吋磷化銦晶圓後段製程以及研究磷化銦材料的乾式蝕刻機制。從結果發現使用次氯化硼 (BCl3)與氯氣(Cl2)為主要的蝕刻氣體可得到每分鐘1.2微米的高蝕刻率在高寬深比是2:1的100微米厚的晶圓，而且所使用的非光阻光罩材料對磷化銦的蝕刻選擇比超過200比1。所蝕刻出來的孔洞用高頻微波分析儀量測特定的監控元件可得到46pH。

The purpose of my studies is to investigate a proper backside process for 4 inches InP wafers and to do research of the dry etching mechanism of InP material. The result represents that there is 1.2 □m/min high etching rate at the aspect ratio 2, for 50 □m diameter via in 100 □m thick wafer thickness. The selectivity of hard mask to InP is over 200:1 by using much more safe etching process with BCl3/Cl2 gases composition. The backside via inductance is 46 pH which was measured by an S parameter measurement tool at the particular PCM structures.