标题: | Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction |
作者: | Lin, Chao-Cheng Chang, Ting- Tu, Chun-Hao Chen, Wei-Ren Hu, Chih-Wei Sze, Simon M. Tseng, Tseung-Yuen Chen, Sheng-Chi Lin, Jian-Yang 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | metal-insulator boundaries;molybdenum;molybdenum compounds;nanostructured materials;oxidation;rapid thermal annealing;reduction (chemical);semiconductor storage;transmission electron microscopy;X-ray photoelectron spectra |
公开日期: | 1-十二月-2008 |
摘要: | An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide. |
URI: | http://dx.doi.org/10.1063/1.3039065 http://hdl.handle.net/11536/8053 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3039065 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 93 |
Issue: | 22 |
结束页: | |
显示于类别: | Articles |
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