标题: | Anomalous Gate-Edge Leakage Induced by High Tensile Stress in NMOSFET |
作者: | Liu, Po-Tsun Huang, Chen-Shuo Lim, Peng-Soon Lee, Da-Yuan Tsao, Shueh-Wen Chen, Chi-Chun Tao, Hun-Jan Mii, Yuh-Jier 光电工程学系 显示科技研究所 Department of Photonics Institute of Display |
关键字: | Gate leakage current;MOSFETs;stress memorization technique (SMT) |
公开日期: | 1-十一月-2008 |
摘要: | Anomalously high gate tunneling current, induced by high-tensile-stress memorization technique, is reported in this letter. Carrier-separation measurement method shows that the increased gate tunneling current is originated from the higher gate-to-source/drain (S/D) tunneling current, which worsens when channel length is getting shorter. Also, the device with enhanced tensile strain exhibits 9% higher gate-to-S/D overlapping capacitance. These data indicate that the anomalously high gate tunneling current could be attributed to the high tensile strain that induces the effects of excessive lightly doped dopant diffusion and higher gate-edge damage. The proposed inference is confirmed by channel hot-electron stress. |
URI: | http://dx.doi.org/10.1109/LED.2008.2005518 http://hdl.handle.net/11536/8195 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2005518 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 29 |
Issue: | 11 |
起始页: | 1249 |
结束页: | 1251 |
显示于类别: | Articles |
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