Fabrication of Ni Nanostructures on p-Si by Scanning Probe Lithography on Si(3)N(4) Films and Selective Electrodeposition

Abstract

Ni-Si nano Schottky junctions are fabricated by the combined process of scanning probe lithography and electrodeposition. The Si(3)N(4) film was patterned by probe-induced oxidation and became a mask for selective electrodeposition of Ni on p-Si substrate. The Ni pattern consists of Ni nano dots, whose diameter is less then 60 nm. The composition and ferromagnetism of Ni dots are verified by energy dispersive spectrum and magnetic force microscopy. The schottky barrier of Ni-Si nano contact is 0.52 V determined by the I-V measurement of conducting atomic force microscopy (CAFM). From current mapping images, it shows that chemical impurity at the Ni-Si interfaces can result in the poor conductance of the junctions.