Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions

Abstract

We have studied the nitrogen composition dependence of the characteristics of TaN/HfLaON/Hf(1-x-y)N(x)O(y)/ SiO(2)/Si MONOS memory devices. By increasing the N composition in the Hf(1-x-y)N(x)O(y) trapping layer, both the memory window And high-temperature retention improved. The Hf(0.3)N(0.2)O(0.5) MONOS device displayed good characteristics in terms of its +/-9-V program/erase (P/E) voltage, 100-mu s P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85 degrees C or 1.5 V at 125 degrees C.