隨機記憶體用超薄氧化鉭介電薄膜電容之研發

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	林鵬	en_US
dc.contributor.author	LIN PANG	en_US
dc.date.accessioned	2014-12-13T10:28:39Z	-
dc.date.available	2014-12-13T10:28:39Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-027	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/88478	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=525776&docId=95664	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	動態隨機存取記憶體	zh_TW
dc.subject	介電常數	zh_TW
dc.subject	薄膜	zh_TW
dc.subject	電容	zh_TW
dc.subject	濺渡	zh_TW
dc.subject	DRAM	en_US
dc.subject	Dielectric constant	en_US
dc.subject	Thin film	en_US
dc.subject	Capacitor	en_US
dc.subject	Sputtering	en_US
dc.title	隨機記憶體用超薄氧化鉭介電薄膜電容之研發	zh_TW
dc.title	Ultra Thin Ta/sub 2/O/sub 5/ Film Capacitor for DRAM	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程系	zh_TW
顯示於類別：	研究計畫