深次微米T型閘極金氧半電晶體之改良研製及其效應之研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	黃調元	en_US
dc.contributor.author	TIAO-YUANHUANG	en_US
dc.date.accessioned	2014-12-13T10:28:51Z	-
dc.date.available	2014-12-13T10:28:51Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-037	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/88700	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=542052&docId=99568	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	閘極漏電流	zh_TW
dc.subject	前非晶化佈植	zh_TW
dc.subject	Gate leakage current	en_US
dc.subject	Preamorphization implant	en_US
dc.title	深次微米T型閘極金氧半電晶體之改良研製及其效應之研究	zh_TW
dc.title	Fabrication and Characterization of Deep-Submicron MOSFET with T-Gate Structure Using a Refined Process with Nitride/TEOS Stack Spacer	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.