以氫化物氣相磊晶法開發III-V族氮化物基板(I)

Full metadata record

DC Field	Value	Language
dc.contributor.author	李威儀	en_US
dc.contributor.author	LEE WEI-I	en_US
dc.date.accessioned	2014-12-13T10:29:20Z	-
dc.date.available	2014-12-13T10:29:20Z	-
dc.date.issued	2006	en_US
dc.identifier.govdoc	NSC95-2622-E009-011	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/89134	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1326359&docId=246010	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	以氫化物氣相磊晶法開發III-V族氮化物基板(I)	zh_TW
dc.title	III-V Group Nitride Base Substrates Developed by Hydride Vapor Phase Epitaxy(I)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子物理學系(所)	zh_TW
Appears in Collections:	Research Plans