| 標題: | 以氫化物氣相磊晶法開發III-V族氮化物基板(I) III-V Group Nitride Base Substrates Developed by Hydride Vapor Phase Epitaxy(I) |
| 作者: | 李威儀 LEE WEI-I 國立交通大學電子物理學系(所) |
| 公開日期: | 2006 |
| 官方說明文件#: | NSC95-2622-E009-011 |
| URI: | http://hdl.handle.net/11536/89134 https://www.grb.gov.tw/search/planDetail?id=1326359&docId=246010 |
| Appears in Collections: | Research Plans |
- 以氫化物氣相磊晶法開發III-V族氮化物基板( II ) / 李威儀;LEE WEI-I
- The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films / Lin, PY;Wu, YCS
- METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF / LEE, Wei I;Huang, Hsin Hsiung;Chen, Kuei Ming;Yeh, Yen Hsien
- METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF / Lee Wei I;Huang Hsin Hsiung;Chen Kuei Ming;Yeh Yen Hsien
- Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure / Huang, Hsin-Hsiung;Chao, Chu-Li;Chi, Tung-Wei;Chang, Yu-Lin;Liu, Po-Chun
- Free-standing a-plane GaN substrates grown by HVPE / Wu, Yin-Hao;Yeh, Yen-Hsien;Chen, Kuei-Ming;Yang, Yu-Jen;Lee, Wei-I
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