深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II)

標題:	深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II) Tunneling Leakage, Latch-up, and ESD in Deep Submicron MOSFET's (II)
作者:	陳明哲 CHEN MING-JER 交通大學電子工程研究所
關鍵字:	穿隧漏電流;快閃式記憶體;深次微米;靜電放電;鎖定;超大型積體電路;Tunneling leakage;Flash memory;Deep submicrometer;ESD;Latch-up;VLSI
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-049
URI:	http://hdl.handle.net/11536/89508 https://www.grb.gov.tw/search/planDetail?id=542092&docId=99579
Appears in Collections:	Research Plans

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