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dc.contributor.authorChiu, Ya-Pingen_US
dc.contributor.authorChen, Yu-Tingen_US
dc.contributor.authorHuang, Bo-Chaoen_US
dc.contributor.authorShih, Min-Chuanen_US
dc.contributor.authorYang, Jan-Chien_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorLiang, Chen-Weien_US
dc.contributor.authorSeidel, Janen_US
dc.contributor.authorChen, Yi-Chunen_US
dc.contributor.authorRamesh, Ramamoorthyen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2014-12-08T15:11:45Z-
dc.date.available2014-12-08T15:11:45Z-
dc.date.issued2011-04-05en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://dx.doi.org/10.1002/adma.201004143en_US
dc.identifier.urihttp://hdl.handle.net/11536/9014-
dc.description.abstractDirect evidence of the electronic configurations across domain walls in BiFeO(3) is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109 degrees domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm.en_US
dc.language.isoen_USen_US
dc.titleAtomic-Scale Evolution of Local Electronic Structure Across Multiferroic Domain Wallsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adma.201004143en_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.citation.volume23en_US
dc.citation.issue13en_US
dc.citation.spage1530en_US
dc.citation.epage1534en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000289210800005-
dc.citation.woscount36-
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