完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiu, Ya-Ping | en_US |
dc.contributor.author | Chen, Yu-Ting | en_US |
dc.contributor.author | Huang, Bo-Chao | en_US |
dc.contributor.author | Shih, Min-Chuan | en_US |
dc.contributor.author | Yang, Jan-Chi | en_US |
dc.contributor.author | He, Qing | en_US |
dc.contributor.author | Liang, Chen-Wei | en_US |
dc.contributor.author | Seidel, Jan | en_US |
dc.contributor.author | Chen, Yi-Chun | en_US |
dc.contributor.author | Ramesh, Ramamoorthy | en_US |
dc.contributor.author | Chu, Ying-Hao | en_US |
dc.date.accessioned | 2014-12-08T15:11:45Z | - |
dc.date.available | 2014-12-08T15:11:45Z | - |
dc.date.issued | 2011-04-05 | en_US |
dc.identifier.issn | 0935-9648 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1002/adma.201004143 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9014 | - |
dc.description.abstract | Direct evidence of the electronic configurations across domain walls in BiFeO(3) is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109 degrees domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Atomic-Scale Evolution of Local Electronic Structure Across Multiferroic Domain Walls | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/adma.201004143 | en_US |
dc.identifier.journal | ADVANCED MATERIALS | en_US |
dc.citation.volume | 23 | en_US |
dc.citation.issue | 13 | en_US |
dc.citation.spage | 1530 | en_US |
dc.citation.epage | 1534 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000289210800005 | - |
dc.citation.woscount | 36 | - |
顯示於類別: | 期刊論文 |