高介電氧化層奈米CMOS元件可靠性關鍵問題及界面量測技術研究(II)

標題:	高介電氧化層奈米CMOS元件可靠性關鍵問題及界面量測技術研究(II) Key Reliability Issues and Interface Characterization Techniques for High-K Nano-CMOS Devices(II)
作者:	莊紹勳 Chung Steve S 交通大學電子工程系
公開日期:	2004
官方說明文件#:	NSC93-2215-E009-026
URI:	http://hdl.handle.net/11536/91018 https://www.grb.gov.tw/search/planDetail?id=1026678&docId=195176
Appears in Collections:	Research Plans

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