氧化物/高分子複合薄膜之微波介電性質研究

Abstract

由於個人無線通訊近年發展快速。為因應產品微小化的要求，電子元件相關的電 路與材料上必須整合與開發。SIP 技術發展朝向將所有主、被動元件進行整合成為單 一元件於封裝架構上，以節省空間達到縮小化之要求。尤其在封裝基板上以薄膜技術 成長一或多層之介電薄膜，如此便可製作出通訊元件所需的傳輸線、電阻、電感或電 容。而目前適用在高頻元件的介電層的種類不多而性質仍須多加深入研究。因此主持 人基於過去多年研發薄膜型微波元件的經驗，在本計畫擬定二年內進行：合成含氧化 物的複合介電薄膜；進行該膜材料、物性、化性分析；研究該膜與金屬電極間的附著 性，並開發緩衝層以增進附著性；高頻實場下量測該膜介電性質；最後合成一系列不 同介電常數的奈米複合薄膜。此計畫目標可開發出微波元件設計者所需之多種選擇、 製程簡易、相容性高的高頻介電層。

The trend of miniaturized products in the age of progressing personal wireless communication pushed the integration of circuits and materials in the electronic devices. The technology of SIP is going forward to integrate all the active and passive components into a single device on the frame of packaging using a less space. Particularly, on the package board one or more layers of thin dielectric films can be grown by the thin film technology to fabricate the transmission lines, resistors, inductors and capacitors required by communication devices. However, the choices of the dielectric layers suitable for high-frequency devices are rare and their properties need to be studied in detail. Hence, the principle investigator, based on the past years experiences on the thin-film microwave devices, proposed the following two-year project, including: synthesis of the composite films containing nano-sized oxide powders; characterizations of the material, physical and chemical properties of the films; studies on the adhesion between the films and metal electrodes, and development of buffer layers for enhancing the adhesion; measurement of the film dielectric properties under high frequency fields; and, finally, the synthesis of a series of films with differing dielectric constants. The aim of the research is to develop highfrequency dielectric films with multiple choices, easy processing, and high compatibility, as demanded by the microwave device designers.