超薄閘極氧化層CMOS元件軟崩潰效應研究(II)

標題:	超薄閘極氧化層CMOS元件軟崩潰效應研究(II) In-Depth Study of Soft Breakdown Effects in Ultra-Thin Oxide CMOS (II)
作者:	汪大暉 WANG TAHUI 國立交通大學電子工程學系
公開日期:	2003
官方說明文件#:	NSC92-2215-E009-024
URI:	http://hdl.handle.net/11536/92178 https://www.grb.gov.tw/search/planDetail?id=873444&docId=167328
Appears in Collections:	Research Plans

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