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dc.contributor.authorLee, Chen-Mingen_US
dc.contributor.authorTsui, Bing-Yueen_US
dc.date.accessioned2014-12-08T15:12:03Z-
dc.date.available2014-12-08T15:12:03Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2010.2095493en_US
dc.identifier.urihttp://hdl.handle.net/11536/9238-
dc.description.abstractHigh-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide (HfO(2)) as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high-kappa gate dielectric, ultrathin poly-SiNW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 mu A/mu m results from the ultrashort gate length (L(G)), thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications.en_US
dc.language.isoen_USen_US
dc.titleHigh-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO(2) Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2010.2095493en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue3en_US
dc.citation.spage327en_US
dc.citation.epage329en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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