Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention

Abstract

We have fabricated the TaN-[SiO(2)-LaAlO(3)]-HfON-[LaAlO(3)-SiO(2)]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 degrees C, and a 5.5-V endurance window at 10(6) cycles were measured under very fast 100-mu s and low +/- 16-V program/erase. These excellent results were achieved using an As(+) implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.