標題: 應用在Ku波段之氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析
High Power Electronic Devices Fabrication and High Frequency Characterization of Gallium Nitride Based Compound Semiconductors for Ku Band
作者: 張翼
交通大學材料科學與工程系
公開日期: 2002
官方說明文件#: NSC91-2215-E009-036
URI: http://hdl.handle.net/11536/92767
https://www.grb.gov.tw/search/planDetail?id=784374&docId=150762
Appears in Collections:Research Plans


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