完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, Chun-Hu | en_US |
dc.contributor.author | Yeh, Fon-Shan | en_US |
dc.contributor.author | Chin, Albert | en_US |
dc.date.accessioned | 2014-12-08T15:12:08Z | - |
dc.date.available | 2014-12-08T15:12:08Z | - |
dc.date.issued | 2011-02-15 | en_US |
dc.identifier.issn | 0935-9648 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1002/adma.201002946 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9298 | - |
dc.description.abstract | Very high performance Ni/GeO(x)/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO(x) and metal oxynitride HfON, as well as low cost electrodes. The device shows low set and reset powers, good 85 degrees C retention, and 10(5) endurance, which are near to the characteristics of existing commercial flash memory. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/adma.201002946 | en_US |
dc.identifier.journal | ADVANCED MATERIALS | en_US |
dc.citation.volume | 23 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 902 | en_US |
dc.citation.epage | + | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000287668500016 | - |
dc.citation.woscount | 51 | - |
顯示於類別: | 期刊論文 |