Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

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DC 欄位	值	語言
dc.contributor.author	Cheng, Chun-Hu	en_US
dc.contributor.author	Yeh, Fon-Shan	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:12:08Z	-
dc.date.available	2014-12-08T15:12:08Z	-
dc.date.issued	2011-02-15	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/adma.201002946	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9298	-
dc.description.abstract	Very high performance Ni/GeO(x)/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO(x) and metal oxynitride HfON, as well as low cost electrodes. The device shows low set and reset powers, good 85 degrees C retention, and 10(5) endurance, which are near to the characteristics of existing commercial flash memory.	en_US
dc.language.iso	en_US	en_US
dc.title	Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/adma.201002946	en_US
dc.identifier.journal	ADVANCED MATERIALS	en_US
dc.citation.volume	23	en_US
dc.citation.issue	7	en_US
dc.citation.spage	902	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000287668500016	-
dc.citation.woscount	51	-
顯示於類別：	期刊論文

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