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dc.contributor.author曾俊元en_US
dc.contributor.authorTSEUNG-YUENTSENGen_US
dc.date.accessioned2014-12-13T10:35:37Z-
dc.date.available2014-12-13T10:35:37Z-
dc.date.issued2001en_US
dc.identifier.govdocNSC90-2212-E009-076zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/93516-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=662731&docId=125584en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject矽晶圓zh_TW
dc.subject化學氣相沉積法zh_TW
dc.subject鈦酸鍶鋇薄膜zh_TW
dc.subject介電薄膜zh_TW
dc.subjectSilicon waferen_US
dc.subjectChemical vapor deposition (CVD)en_US
dc.subjectBST thin filmen_US
dc.subjectDielectric thin filmen_US
dc.title12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫Ⅲ:利用CVD法成長BST薄膜與特性分析(II)zh_TW
dc.titleGrowth and Characterizations of CVD BST Thin Films(II)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
顯示於類別:研究計畫