標題: Reliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stress
作者: Ma, Ming-Wen
Chen, Chih-Yang
Wu, Woei-Cherrig
Su, Chun-Jung
Kao, Kuo-Hsing
Chao, Tien-Sheng
Lei, Tan-Fu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: HfO2 gate dielectric;hot-carrier stress (HCS);low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT);negative-bias temperature instability (NBTI);positive-bias temperature instability (PBTI);reliability
公開日期: 1-May-2008
摘要: In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO2 gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO2 gate dielectric is observed for the PBS and PBTI of the HfO2 LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO2 LTPS-TFT.
URI: http://dx.doi.org/10.1109/TED.2008.919710
http://hdl.handle.net/11536/9374
ISSN: 0018-9383
DOI: 10.1109/TED.2008.919710
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 55
Issue: 5
起始頁: 1153
結束頁: 1160
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