Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

標題:	Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs
作者:	Desmaris, V. Shiu, J. Y. Rorsman, N. Zirath, H. Chang, E. Y. 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	AlGaN/GaN HEMTs;microwave FETs;passivation;transient analysis
公開日期:	1-五月-2008
摘要:	The effects of the composition of oxynitride passivations (SiOxNy) deposited by plasma enhanced chemical-vapor deposition (PECVD) at room temperature on the microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. Five different SiOxNy passivating layers were deposited covering the whole range of dielectrics combinations from SiOx to SiNy. Their impacts on the HEMT performance were studied by means of DC, S-parameters, pulsed IV and load-pull measurements. The oxynitride dielectric with a refraction index of 1.58 was shown to be an effective SiOxNy passivation for limiting the gate-lag effects in the HEMTs and at the same time increasing the breakdown voltage of the device. It is thus a promising passivation layer for microwave power high voltage and high power applications. (c) 2007 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2007.10.022 http://hdl.handle.net/11536/9376
ISSN:	0038-1101
DOI:	10.1016/j.sse.2007.10.022
期刊:	SOLID-STATE ELECTRONICS
Volume:	52
Issue:	5
起始頁:	632
結束頁:	636
顯示於類別：	期刊論文

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