Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor deposition

Abstract

Deposition of a boron-containing layer using B2H6 diluted with H-2 on a Si(001) surface has been carried out in an ultrahigh-vacuum chemical-vapor-deposition (UHV-CVD) system. The deposited boron-containing layers were characterized by atomic force microscope and Auger electron spectroscopy (AES), and the junction depth was determined by secondary-ion-mass spectroscopy. Effective doping is accomplished before perceivable nucleation is initiated. Islands are first formed on the substrate surface at a small dose of diborane, and the grains coalesce to form a rough him for higher doses. At growth temperature above 800 degrees C, the film is composed of possibly SiB6, according to AES depth profiles. Correlation between the junction depth and the sheet resistance of the UHV-CVD-deposited specimens prepared under various conditions is discussed. Postdeposition rapid thermal annealing was performed to study the effect of subsequent thermal cycles on the junction depth and sheet resistance. (C) 1996 American Institute of Physics.