深次微米T型閘極金氧半電晶體之研製

Full metadata record

DC Field	Value	Language
dc.contributor.author	黃調元	en_US
dc.contributor.author	TIAO-YUANHUANG	en_US
dc.date.accessioned	2014-12-13T10:36:52Z	-
dc.date.available	2014-12-13T10:36:52Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-030	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94236	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418076&docId=74161	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	金氧半場效電晶體	zh_TW
dc.subject	窄線寬效應	zh_TW
dc.subject	橋接效應	zh_TW
dc.subject	深次微米	zh_TW
dc.subject	MOSFET	en_US
dc.subject	Narrow line-width effect	en_US
dc.subject	Bridging effect	en_US
dc.subject	Deep submicrometer	en_US
dc.title	深次微米T型閘極金氧半電晶體之研製	zh_TW
dc.title	Development and Characterization of a Novel Method for Fabricating Deep-Micron Si MOSFET's with T-shaped Gate	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.