深次微米T型閘極金氧半電晶體之研製

完整后设资料纪录

DC 栏位	值	语言
dc.contributor.author	黄调元	en_US
dc.contributor.author	TIAO-YUANHUANG	en_US
dc.date.accessioned	2014-12-13T10:36:52Z	-
dc.date.available	2014-12-13T10:36:52Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-030	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94236	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418076&docId=74161	en_US
dc.description.sponsorship	行政院国家科学委员会	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	金氧半场效电晶体	zh_TW
dc.subject	窄线宽效应	zh_TW
dc.subject	桥接效应	zh_TW
dc.subject	深次微米	zh_TW
dc.subject	MOSFET	en_US
dc.subject	Narrow line-width effect	en_US
dc.subject	Bridging effect	en_US
dc.subject	Deep submicrometer	en_US
dc.title	深次微米T型闸极金氧半电晶体之研制	zh_TW
dc.title	Development and Characterization of a Novel Method for Fabricating Deep-Micron Si MOSFET's with T-shaped Gate	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大学电子工程系	zh_TW
显示于类别：	Research Plans

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APA	黄., & T. (1999). 深次微米T型闸极金氧半电晶体之研制. https://www.grb.gov.tw/search/planDetail?id=418076&docId=74161.
Bibtex	@article{1999, title={深次微米T型闸极金氧半电晶体之研制}, author={黄调元 and TIAO-YUANHUANG}, journal={https://www.grb.gov.tw/search/planDetail?id=418076&docId=74161}, year={1999}, url={https://ir.lib.nycu.edu.tw/handle/11536/94236?mode=full}, }