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dc.contributor.author黃調元en_US
dc.contributor.authorTIAO-YUANHUANGen_US
dc.date.accessioned2014-12-13T10:36:52Z-
dc.date.available2014-12-13T10:36:52Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E009-030zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94236-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418076&docId=74161en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject金氧半場效電晶體zh_TW
dc.subject窄線寬效應zh_TW
dc.subject橋接效應zh_TW
dc.subject深次微米zh_TW
dc.subjectMOSFETen_US
dc.subjectNarrow line-width effecten_US
dc.subjectBridging effecten_US
dc.subjectDeep submicrometeren_US
dc.title深次微米T型閘極金氧半電晶體之研製zh_TW
dc.titleDevelopment and Characterization of a Novel Method for Fabricating Deep-Micron Si MOSFET's with T-shaped Gateen_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
顯示於類別:研究計畫


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