完整後設資料紀錄
DC 欄位語言
dc.contributor.author龍文安en_US
dc.contributor.authorLoong Wen-anen_US
dc.date.accessioned2014-12-13T10:36:53Z-
dc.date.available2014-12-13T10:36:53Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E009-026zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94250-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418244&docId=74199en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject電子束zh_TW
dc.subject微影術zh_TW
dc.subject鄰近效應修正zh_TW
dc.subject充電效應zh_TW
dc.subject輸出量zh_TW
dc.subjectE-beamen_US
dc.subjectLithographyen_US
dc.subjectProximity effect correctionen_US
dc.subjectChanging effecten_US
dc.subjectThroughputen_US
dc.title電子束微影之鄰近效應修正zh_TW
dc.titleProximity Correction of Electron Beam Lithographyen_US
dc.typePlanen_US
dc.contributor.department交通大學應用化學系zh_TW
顯示於類別:研究計畫