深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究

標題:	深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究 Tunneling Leakage, Latch-up and ESD in Deep Submicron MOSFET's
作者:	陳明哲 CHEN MING-JER 交通大學電子工程研究所
關鍵字:	穿隧洩漏電流;靜電放電;金氧半場效電晶體;深次微米;鎖定;快閃式記憶體;Tunneling leakage current;ESD;MOSFET;Deep submicrometer;Latch-up;Flash memory
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-047
URI:	http://hdl.handle.net/11536/94272 https://www.grb.gov.tw/search/planDetail?id=418223&docId=74194
Appears in Collections:	Research Plans

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