深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究

完整后设资料纪录

DC 栏位	值	语言
dc.contributor.author	陈明哲	en_US
dc.contributor.author	CHEN MING-JER	en_US
dc.date.accessioned	2014-12-13T10:36:56Z	-
dc.date.available	2014-12-13T10:36:56Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-047	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94272	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=418223&docId=74194	en_US
dc.description.sponsorship	行政院国家科学委员会	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	穿隧泄漏电流	zh_TW
dc.subject	静电放电	zh_TW
dc.subject	金氧半场效电晶体	zh_TW
dc.subject	深次微米	zh_TW
dc.subject	锁定	zh_TW
dc.subject	快闪式记忆体	zh_TW
dc.subject	Tunneling leakage current	en_US
dc.subject	ESD	en_US
dc.subject	MOSFET	en_US
dc.subject	Deep submicrometer	en_US
dc.subject	Latch-up	en_US
dc.subject	Flash memory	en_US
dc.title	深次微米MOSFET穿隧漏电流、锁定及静电放电之研究	zh_TW
dc.title	Tunneling Leakage, Latch-up and ESD in Deep Submicron MOSFET's	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大学电子工程研究所	zh_TW
显示于类别：	Research Plans

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APA	陈., & CHEN M. (1999). 深次微米MOSFET穿隧漏电流、锁定及静电放电之研究. https://www.grb.gov.tw/search/planDetail?id=418223&docId=74194.
Bibtex	@article{1999, title={深次微米MOSFET穿隧漏电流、锁定及静电放电之研究}, author={陈明哲 and CHEN MING-JER}, journal={https://www.grb.gov.tw/search/planDetail?id=418223&docId=74194}, year={1999}, url={https://ir.lib.nycu.edu.tw/handle/11536/94272?locale=zh_CN&mode=full}, }