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dc.contributor.author黃調元en_US
dc.contributor.authorTIAO-YUANHUANGen_US
dc.date.accessioned2014-12-13T10:36:56Z-
dc.date.available2014-12-13T10:36:56Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E009-029zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94281-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418080&docId=74162en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject輻射zh_TW
dc.subject短通道效應zh_TW
dc.subject金氧半場效電晶體zh_TW
dc.subject金氧半導體zh_TW
dc.subjectIrradiationen_US
dc.subjectShot-channel effecten_US
dc.subjectMOSFETen_US
dc.subjectMOSen_US
dc.title輻射對正反短通道效應之研究zh_TW
dc.titleThe Effects of Irradiation on the NSCE and RSCE of MOSFET'sen_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
Appears in Collections:Research Plans


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