具有反向短通道效應N型MOS元件性能及可靠性的研究

標題:	具有反向短通道效應N型MOS元件性能及可靠性的研究 Performance and Reliability Evaluations of Submicron-MOSFET's with Reverse Short Channel Effect
作者:	莊紹勳 Chung Steve S 國立交通大學電子工程學系
關鍵字:	反向短通道效應;臨限電壓;次微米元件;金氧半導體;Reverse short-channel effect;Threshold voltage;Submicron device;MOS
公開日期:	1996
官方說明文件#:	NSC85-2215-E009-052
URI:	http://hdl.handle.net/11536/96138 https://www.grb.gov.tw/search/planDetail?id=234658&docId=43079
Appears in Collections:	Research Plans