具有反向短通道效應N型MOS元件性能及可靠性的研究

Title:	具有反向短通道效應N型MOS元件性能及可靠性的研究 Performance and Reliability Evaluations of Submicron-MOSFET's with Reverse Short Channel Effect
Authors:	莊紹勳 Chung Steve S 國立交通大學電子工程學系
Keywords:	反向短通道效應;臨限電壓;次微米元件;金氧半導體;Reverse short-channel effect;Threshold voltage;Submicron device;MOS
Issue Date:	1996
Gov't Doc #:	NSC85-2215-E009-052
URI:	http://hdl.handle.net/11536/96138 https://www.grb.gov.tw/search/planDetail?id=234658&docId=43079
Appears in Collections:	Research Plans

APA	莊., & Chung S. S (1996). 具有反向短通道效應N型MOS元件性能及可靠性的研究. https://www.grb.gov.tw/search/planDetail?id=234658&docId=43079.
Bibtex	@article{1996, title={具有反向短通道效應N型MOS元件性能及可靠性的研究}, author={莊紹勳 and Chung Steve S}, journal={https://www.grb.gov.tw/search/planDetail?id=234658&docId=43079}, year={1996}, url={https://ir.lib.nycu.edu.tw/handle/11536/96138}, }