標題: 具有反向短通道效應N型MOS元件性能及可靠性的研究
Performance and Reliability Evaluations of Submicron-MOSFET's with Reverse Short Channel Effect
作者: 莊紹勳
Chung Steve S
國立交通大學電子工程學系
關鍵字: 反向短通道效應;臨限電壓;次微米元件;金氧半導體;Reverse short-channel effect;Threshold voltage;Submicron device;MOS
公開日期: 1996
官方說明文件#: NSC85-2215-E009-052
URI: http://hdl.handle.net/11536/96138
https://www.grb.gov.tw/search/planDetail?id=234658&docId=43079
Appears in Collections:Research Plans