標題: 薄閘氧化層深次微米n-MOS元件的熱載子可靠性分析
Analysis of Hot Carrier Reliability for Thin Gate Oxide Deep-Submicron nMOSFET's
作者: 莊紹勳
Chung Steve S
交通大學電子工程系
關鍵字: 熱載子;可靠度;氧化層;金氧半場效電晶體;深次微米;洩漏電流;Hot carrier;Reliability;Oxided larger;MOSFET;Deep submicrometer;Leakage current
公開日期: 1999
官方說明文件#: NSC88-2215-E009-041
URI: http://hdl.handle.net/11536/94333
https://www.grb.gov.tw/search/planDetail?id=418054&docId=74156
Appears in Collections:Research Plans


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