電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究

標題:	電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究 Study of Plasma Antenna Effect in Ultrathin Gate Oxides
作者:	林鴻志 HORNG-CHIHLIN 國立交通大學毫微米實驗室
關鍵字:	天線效應;電漿製程;超薄閘;氧化層;充電損害;深次微米;光阻;灰化;Antenna effect;Plasma process;Ultrathin gate;Oxided layer;Charging damage;Deep submicrometer;Photo resistance;Ashing
公開日期:	1999
官方說明文件#:	NSC88-2215-E317-005
URI:	http://hdl.handle.net/11536/94383 https://www.grb.gov.tw/search/planDetail?id=428978&docId=76777
Appears in Collections:	Research Plans

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