利用MOCVD製備高介電閘極材料之研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	趙天生	en_US
dc.contributor.author	TIEN-SHENGCHAO	en_US
dc.date.accessioned	2014-12-13T10:37:22Z	-
dc.date.available	2014-12-13T10:37:22Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-117	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94576	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665840&docId=126409	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	有機金屬化學氣相沈積法	zh_TW
dc.subject	高介電閘	zh_TW
dc.subject	製備	zh_TW
dc.subject	MOCVD	en_US
dc.subject	High dielectric gate	en_US
dc.subject	Formation	en_US
dc.title	利用MOCVD製備高介電閘極材料之研究	zh_TW
dc.title	Study of High-K Dielectrics Formation by MOCVD	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子物理學系	zh_TW
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.