| 標題: | 氮化鎵族光電材料與元件之研發---子計畫III：鋁銦鎵氮化物微結構及光電特性分析(I) The Optoeclectronic and Microstructure Characterizations of AlxGa/sub 1-x/N/GaN and InxGa/sub 1-x/N/GaN (I) |
| 作者: | 馮明憲 交通大學材料科學與工程研究所 |
| 關鍵字: | 氮化鎵;光電材料;微觀結構;GaN;Optoelectronic material;Microstructure |
| 公開日期: | 1999 |
| 官方說明文件#: | NSC88-2218-E009-051 |
| URI: | http://hdl.handle.net/11536/94716 https://www.grb.gov.tw/search/planDetail?id=461765&docId=84664 |
| Appears in Collections: | Research Plans |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
