完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | 汪大暉 | en_US |
| dc.contributor.author | WANG TAHUI | en_US |
| dc.date.accessioned | 2014-12-13T10:38:07Z | - |
| dc.date.available | 2014-12-13T10:38:07Z | - |
| dc.date.issued | 1998 | en_US |
| dc.identifier.govdoc | NSC87-2215-E009-044 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/95068 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=396217&docId=69989 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | 金氧半場效電晶體 | zh_TW |
| dc.subject | 漏電流 | zh_TW |
| dc.subject | 浮動閘 | zh_TW |
| dc.subject | 量子效應 | zh_TW |
| dc.subject | Deep submicron | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | Leakage current | en_US |
| dc.subject | Floating gate | en_US |
| dc.subject | Quantum effect | en_US |
| dc.title | 深次微米MOSFET元件可靠性研究---子計畫二：利用改良式浮動閘極法測量氧化層內缺陷所造成之漏電流與理論分析(II) | zh_TW |
| dc.title | Theory and Characterization of Trap Induced Oxide Leakage Current by Using a Modified Floating Gate Technique(II) | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| 顯示於類別： | 研究計畫 | |
