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dc.contributor.author鄭晃忠en_US
dc.date.accessioned2014-12-13T10:39:05Z-
dc.date.available2014-12-13T10:39:05Z-
dc.date.issued1996en_US
dc.identifier.govdocNSC85-2215-E009-035zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/96065-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=234557&docId=43052en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject複晶矽薄膜電晶體zh_TW
dc.subject複晶矽薄膜zh_TW
dc.subject快速退火處理zh_TW
dc.subject再結晶zh_TW
dc.subjectPolysilicon thin film transistoren_US
dc.subjectPolysilicon thin filmen_US
dc.subjectRapid thermalprocessen_US
dc.subjectRecrystallizationen_US
dc.title複晶矽薄膜電晶體相關技術之開發與研究---子計畫一:複晶矽薄膜電晶體之薄膜成長技術之研究zh_TW
dc.titleGrowth Technology of Polycrystalline Silicon Films for Poly-Si Thin-Film Transistorsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
顯示於類別:研究計畫