| 標題: | 砷離子佈植砷化鎵的特性研究 Characterization of Arsenic Ion Implanted GaAs |
| 作者: | 張振雄 CHANG CHEN-SHIUNG 國立交通大學光電工程研究所 |
| 關鍵字: | 砷化鎵;非晶質;深能階缺陷;薄膜;GaAs;Amorphous;Deep level trap;Thin film |
| 公開日期: | 1996 |
| 官方說明文件#: | NSC85-2215-E009-064 |
| URI: | http://hdl.handle.net/11536/96120 https://www.grb.gov.tw/search/planDetail?id=234693&docId=43086 |
| Appears in Collections: | Research Plans |
- 低溫有機金屬氣相磊晶與砷離子佈植砷化鎵薄膜之結構、缺陷及電性研究 / 陳文中;Chen, Wen-Chung;張振雄;Chen-Shiung Chang
- Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications / Pan, CL;Lin, GR
- 有機金屬氣相磊晶法低溫成長砷化鎵及砷銻化鋁之熱力學分析 / 金明達;Ming-Ta Chin;陳衛國;Dr. Wei-Kuo Chen
- GaNAs與GaInNAs的磊晶成長與特性研究 / 李威儀;LEE WEI-I
- Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs / Lin, GR;Chen, WC;Chang, CS;Chao, SC;Wu, KH
- Effect of thermal annealing on electrical conductivities in arsenic-ion-implanted GaAs / Chen, WC;Chang, CS
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