肖基障金氧半場效体之數值模擬

Full metadata record

DC Field	Value	Language
dc.contributor.author	郭雙發	en_US
dc.date.accessioned	2014-12-13T10:39:31Z	-
dc.date.available	2014-12-13T10:39:31Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-063	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96585	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665685&docId=126369	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	肖特基能障	zh_TW
dc.subject	金氧半導體場效電晶體	zh_TW
dc.subject	數值模擬	zh_TW
dc.subject	Schottky barrier	en_US
dc.subject	MOSFET	en_US
dc.subject	Numerical simulation	en_US
dc.title	肖基障金氧半場效体之數值模擬	zh_TW
dc.title	Numerical Simulation of Schottky Barrier MOSFETs	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

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