肖基障金氧半場效体之數值模擬

標題:	肖基障金氧半場效体之數值模擬 Numerical Simulation of Schottky Barrier MOSFETs
作者:	郭雙發國立交通大學電子工程學系
關鍵字:	肖特基能障;金氧半導體場效電晶體;數值模擬;Schottky barrier;MOSFET;Numerical simulation
公開日期:	2001
官方說明文件#:	NSC90-2215-E009-063
URI:	http://hdl.handle.net/11536/96585 https://www.grb.gov.tw/search/planDetail?id=665685&docId=126369
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.