Tailoring of amorphous SiOx nanowires grown by rapid thermal annealing

標題:	Tailoring of amorphous SiOx nanowires grown by rapid thermal annealing
作者:	Lai, Yi-Sheng Wang, Jyh-Liang Liou, Sz-Chian Tu, Chia-Hsun 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	20-二月-2008
摘要:	The growth of Pt-catalyzed SiOx nanowires by rapid thermal annealing at 900 degrees C is demonstrated in the study. The growth of the nanowire is found to occur via a catalyst driven VLS mechanism. The seed particle composed of Pt-Si alloy is observed from the reaction between SiO2 and the catalytic Pt film. When the annealing time exceeds 60 s, the SiOx nanowires first agglomerate, and then collapse to form dendritic islands on the surface. The dendritic islands may result from the reaction between Pt-Si seed particle and SiOx nanowires, and are identified to be the Pt-Si compound. (C) 2008 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.cplett.2008.01.026 http://hdl.handle.net/11536/9662
ISSN:	0009-2614
DOI:	10.1016/j.cplett.2008.01.026
期刊:	CHEMICAL PHYSICS LETTERS
Volume:	453
Issue:	1-3
起始頁:	97
結束頁:	100
顯示於類別：	期刊論文

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