蕭特基能障金氧半電晶體元件研製與理論分析---子計畫II：蕭特基能障SOI金氧半電晶體元件研製與分析

Full metadata record

DC Field	Value	Language
dc.contributor.author	黃調元	en_US
dc.contributor.author	TIAO-YUANHUANG	en_US
dc.date.accessioned	2014-12-13T10:39:42Z	-
dc.date.available	2014-12-13T10:39:42Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-080	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96752	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665749&docId=126386	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	蕭特基能障	zh_TW
dc.subject	絕緣矽	zh_TW
dc.subject	金氧半導體場效電晶體	zh_TW
dc.subject	Schotty barrier	en_US
dc.subject	Silicon-on-insulator (SOI)	en_US
dc.subject	MOSFET	en_US
dc.title	蕭特基能障金氧半電晶體元件研製與理論分析---子計畫II：蕭特基能障SOI金氧半電晶體元件研製與分析	zh_TW
dc.title	Fabrication and Characterization of SOI Schottky Barrier MOSFET	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.