標題: The impact of N-drift implant on ESD robustness of high-voltage NMOS with embedded SCR structure in 40-V CMOS process
作者: Chang, Wei-Jen
Ker, Ming-Dou
Lai, Tai-Xiang
Tang, Tien-Hao
Su, Kuan-Cheng
電機學院
College of Electrical and Computer Engineering
公開日期: 2007
摘要: The ESD robustness on different device structures and layout parameters of high-voltage (HV) NMOS has been investigated in 40-V CMOS process with silicon verification. It was demonstrated, that a specific structure of HV n-type silicon controlled rectifier (HVNSCR) embedded into HV NMOS without N-drift implant in the drain region has the best ESD robustness. Moreover, due to the different current distributions in HV NMOS and HVNSCR, the trends of the TLP-measured It2 under different spacings from the drain diffusion to polygate are different.
URI: http://hdl.handle.net/11536/9690
ISBN: 978-1-4244-1014-9
期刊: IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
起始頁: 249
結束頁: 252
Appears in Collections:Conferences Paper