| 標題: | 高敏感光罩用電子束阻劑系統之研究 Studies on the Highly Sensitive Electron-Beam Resist System |
| 作者: | 龍文安 Loong Wen-an 交通大學應用化學系 |
| 公開日期: | 1993 |
| 官方說明文件#: | NSC82-0405-E009-316 |
| URI: | http://hdl.handle.net/11536/97641 https://www.grb.gov.tw/search/planDetail?id=46875&docId=6742 |
| 顯示於類別： | 研究計畫 |
- A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multilayer resist system and a single-step electron-beam exposure / Lai, YL;Lai, YK;Chang, CY;Chang, EY
- Fullerene-incorporation for enhancing the electron beam resist performance for contact hole patterning and filling / You, HC;Ko, FH;Lei, TF
- A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography / Lai, YL;Chang, EY;Chang, CY;Yang, HPD;Nakamura, K
- Resist nano-modification technology for enhancing the lithography and etching performance / You, HC;Ko, FH;Lei, TF
Loading...