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dc.contributor.authorLin, J. C.en_US
dc.contributor.authorSu, Y. K.en_US
dc.contributor.authorChang, S. J.en_US
dc.contributor.authorLan, W. H.en_US
dc.contributor.authorHuang, K. C.en_US
dc.contributor.authorCheng, Y. C.en_US
dc.contributor.authorLin, W. J.en_US
dc.date.accessioned2014-12-08T15:12:49Z-
dc.date.available2014-12-08T15:12:49Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2007.915620en_US
dc.identifier.urihttp://hdl.handle.net/11536/9879-
dc.description.abstractGallium nitride p-i-n ultraviolet photodiodes (PDs) with a titanium dioxide (TiO2) nano-particles roughened surface have been fabricated. It was found that the responsivity and external quantum efficiency can be improved 60% on the surface roughened PDs. It was also found that light absorption can be enhanced from various incident angles by the TiO2 roughened surface. Furthermore, the high detectivity of 9.2 x 10(1.3) cm.Hz(1/2).W-1 can be achieved from the PD with a rough surface.en_US
dc.language.isoen_USen_US
dc.subjectgallium nitride (GaN)en_US
dc.subjectp-i-nen_US
dc.subjectphotodiodes (PDs)en_US
dc.subjectsurface roughnessen_US
dc.subjecttitanium dioxide (TiO2)en_US
dc.titleImproved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2007.915620en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume20en_US
dc.citation.issue1-4en_US
dc.citation.spage285en_US
dc.citation.epage287en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000253225300092-
dc.citation.woscount1-
Appears in Collections:Articles


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