Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface

doi:10.1109/LPT.2007.915620

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DC 欄位	值	語言
dc.contributor.author	Lin, J. C.	en_US
dc.contributor.author	Su, Y. K.	en_US
dc.contributor.author	Chang, S. J.	en_US
dc.contributor.author	Lan, W. H.	en_US
dc.contributor.author	Huang, K. C.	en_US
dc.contributor.author	Cheng, Y. C.	en_US
dc.contributor.author	Lin, W. J.	en_US
dc.date.accessioned	2014-12-08T15:12:49Z	-
dc.date.available	2014-12-08T15:12:49Z	-
dc.date.issued	2008-01-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2007.915620	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9879	-
dc.description.abstract	Gallium nitride p-i-n ultraviolet photodiodes (PDs) with a titanium dioxide (TiO2) nano-particles roughened surface have been fabricated. It was found that the responsivity and external quantum efficiency can be improved 60% on the surface roughened PDs. It was also found that light absorption can be enhanced from various incident angles by the TiO2 roughened surface. Furthermore, the high detectivity of 9.2 x 10(1.3) cm.Hz(1/2).W-1 can be achieved from the PD with a rough surface.	en_US
dc.language.iso	en_US	en_US
dc.subject	gallium nitride (GaN)	en_US
dc.subject	p-i-n	en_US
dc.subject	photodiodes (PDs)	en_US
dc.subject	surface roughness	en_US
dc.subject	titanium dioxide (TiO2)	en_US
dc.title	Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2007.915620	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	1-4	en_US
dc.citation.spage	285	en_US
dc.citation.epage	287	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000253225300092	-
dc.citation.woscount	1	-
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