High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric

doi:10.1149/1.2993977

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Pan, H. C.	en_US
dc.contributor.author	Lin, S. H.	en_US
dc.contributor.author	Hsu, H. H.	en_US
dc.contributor.author	Hsiao, C. N.	en_US
dc.contributor.author	Chou, C. P.	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:12:50Z	-
dc.date.available	2014-12-08T15:12:50Z	-
dc.date.issued	2008	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9893	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.2993977	en_US
dc.description.abstract	We have fabricated high-kappa Ni/TiZrO/TaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3x10(-8) A/cm(2) at -1 V was obtained for a 18 fF/mu m(2) capacitance density. For a 5.5 fF/mu m(2) capacitance density device, a small voltage coefficient of capacitance alpha of 105 ppm/V(2) and temperature coefficient of capacitance of 156 ppm/degrees C were measured. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2993977] All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.2993977	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	155	en_US
dc.citation.issue	12	en_US
dc.citation.spage	G295	en_US
dc.citation.epage	G298	en_US
dc.contributor.department	機械工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Mechanical Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000260479700065	-
dc.citation.woscount	9	-
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