標題: High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric
作者: Cheng, C. H.
Pan, H. C.
Lin, S. H.
Hsu, H. H.
Hsiao, C. N.
Chou, C. P.
Yeh, F. S.
Chin, Albert
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: We have fabricated high-kappa Ni/TiZrO/TaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3x10(-8) A/cm(2) at -1 V was obtained for a 18 fF/mu m(2) capacitance density. For a 5.5 fF/mu m(2) capacitance density device, a small voltage coefficient of capacitance alpha of 105 ppm/V(2) and temperature coefficient of capacitance of 156 ppm/degrees C were measured. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2993977] All rights reserved.
URI: http://hdl.handle.net/11536/9893
http://dx.doi.org/10.1149/1.2993977
ISSN: 0013-4651
DOI: 10.1149/1.2993977
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 155
Issue: 12
起始頁: G295
結束頁: G298
Appears in Collections:Articles


Files in This Item:

  1. 000260479700065.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.