下一世代高性能及高可靠性的N通道MOS元件設計及量測技術探討

標題:	下一世代高性能及高可靠性的N通道MOS元件設計及量測技術探討 Key Design and Measurement Issues for Achieving High Performance and High Reliability Next Generation N-Channel Mosfets
作者:	莊紹勳 Chung Steve S 國立交通大學電子工程學系及電子研究所
公開日期:	2011
官方說明文件#:	NSC98-2221-E009-161-MY3
URI:	http://hdl.handle.net/11536/98976 https://www.grb.gov.tw/search/planDetail?id=2205386&docId=351807
Appears in Collections:	Research Plans

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